催化学报  2017, Vol. 38 Issue (4): 617-624   PDF    
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本文作者相关文章
Mingce Long
Longhui Zheng
Engineering vacancies for solar photocatalytic applications
Mingce Longa,b, Longhui Zhenga     
a. School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;
b. Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Shanghai Jiao Tong University, Shanghai 200240, China
* Corresponding author. Mingce Long, Tel: +86-21-54747354; Fax: +86-21-54740825; E-mail: long_mc@sjtu.edu.cn
Foundation item: This work was supported by the National Natural Science Foundation of China (21377084) and Special Fund for Agro-scientific Research in the Public Interest (201503107)
Abstract: In contrast to the exploration of novel photocatalytic materials, vacancy engineering of traditional photocatalysts comprising earth-abundant elements represents an effective method for enhancing photocatalytic performance without introducing alien elements. This minireview analyzes the latest progress in engineering vacancies in photocatalysts, remarks on state-of-the-art characterization techniques for vacancies, and reviews the formation chemistry and fundamental benefits of anion and cation vacancies in typical photocatalysts. Although knowledge of these vacancies is increasing, challenges remain in this field, and possible further research is therefore also discussed.
© 2017, Dalian Institute of Chemical Physics, Chinese Academy of Sciences.
Published by Elsevier B.V. All rights reserved.
Key words: Oxygen vacancy     Hydrogenated treatment     Photocatalysis     Chemisorption     Titanium vacancy    
用于太阳光催化反应的空位工程
龙明策a,b, 郑龙辉a     
a. 上海交通大学环境科学与工程学院, 上海 200240;
b. 上海交通大学, 薄膜与微细技术教育部重点实验室, 上海 200240
摘要:空位是一种点缺陷,广泛存在于非化学计量比的半导体光催化材料的晶格中.不同于其它研制复杂结构和组成的新型光催化剂的策略,空位工程设计方法可以基于传统的,由丰量元素组成的光催化剂进行表面或体相晶格的空位调控,以获得宽谱响应的高效光催化材料.该方法具有不引入杂质元素、成本低廉、方法简便等优点,且通过表面化学吸附作用可以耦合热催化和光催化过程,以实现增强的选择性光催化反应. 空位的表征技术包括元素分析,扫描隧道显微镜,催化发光,光致发光或顺磁共振等直接和间接观测技术.近期正电子湮没谱发展成为一种研究空位的重要手段.这种方法可以区分不同位置(如体相和表面)和不同形式(如单一空位或联合空位)的空位并确定其相对浓度,从而用于探索空位影响光催化活性的规律. 氧、氮、硫和卤素原子空位均属于阴离子空位.氢化处理法可以在光催化剂晶格中形成高浓度氧空位,并导致纳米材料表面层的晶格混乱.处理后光催化剂的光学吸收拓展到近红外区,电子给体浓度大大提高,促进了电子输运和界面电荷的迁移与分离;然而,可见光区的吸收对增强的光催化活性没有贡献.氧空位还可以作为活性位点吸附和解离反应物,促进电子从催化剂到吸附质间的转移,甚至直接参与到光催化和光化学反应中.富含氧空位的WO3可以耦合热催化和光催化反应促进CO2的选择性还原,或者利用近红外光活化分子氧并选择性氧化胺.氮空位是含氮的n型半导体光催化材料的本质属性.石墨氮化碳中的氮空位有助于促进电荷分离,同时可以作为化学吸附位用于选择性吸附,活化和还原氮气,因此富含氮空位的光催化剂在还原含氮化合物方面具有应用潜力.由于卤素原子在层状卤氧化铋的层间以较弱的范德华力存在,该类化合物容易形成卤原子空位.通过热处理碘氧化铋可以获得活性增强的含碘空位化合物.空位的出现导致带隙变宽和价带下移,光生空穴氧化能力提高,从而获得更好的光催化活性. 传统的n型半导体光催化剂中难以形成阳离子空位.理论研究表明,含阳离子空位的TiO2具有一系列优点,包括电子传输性能提高,载流子复合受到抑制等.并且钛空位可以作为表面活性位促进水的吸附和离解,从而提高光解水效率.含钛空位的p型TiO2可以通过焙烧甘油化的前驱体制备,钛空位的出现使得光解水和催化降解有机物活性均大幅提高.含碳空位的石墨氮化碳不仅表现出增强的光催化活性,同时能够提高氧吸附并促进两电子还原氧气产生H2O2的反应过程.铋空位能够有效提高铋基光催化剂BiPO4和Bi6S2O15的活性.二维纳米材料的晶面和厚度可以影响表面空位的组成和浓度.BiOCl纳米片的表面是以铋空位为主,而超薄的BiOCl纳米片则是以铋氧联合空位为主,从而表现更优异的光催化活性.最近研究者在含空位的高性能光催化剂制备以及性能调控规律方面取得了长足进展,今后还将继续发展先进的表征技术,进一步研究空位的调控和稳定化手段,并全面理解空位对光催化反应的影响基本规律.空位工程将在半导体光催化技术中发挥更加重要的作用.
关键词氧空位    氢化处理    光催化    化学吸附    钛空位    

1 Introduction

Photocatalysis represents an economical process for the conversion of solar energy for use in a broad range of applications, including environmental remediation, energy and fuel production. Intensive efforts have been undertaken to develop novel photocatalysts with improved performance in terms of broadband absorption, charge migration and reaction pathway efficiency. Strategies frequently applied in the design of photocatalysts include engineering of their nanostructures (nanoarchitectures and exposure of high energy facets [1, 2]), their interfaces and surfaces (nanocomposites with matched energy band positions and Ohmic contacts [3, 4]) and their band structures (doping and solid solutions [5]). Among these strategies, tailoring the vacancies in the lattices of traditional photocatalysts, such as graphitic-C3N4 (g-C3N4), titanium, tungsten or bismuth oxide-based compounds, has enormous potential for achieving high photocatalytic performance in diverse applications.

Vacancies, or point defects, are prevalent in all semiconductor materials because the conductivity of these materials originates from their inherently nonstoichiometric compositions. All chemical functions of materials, such as catalysis, adsorption or sensing behaviors, are dominated by their electronic structures and surface properties. The vacancies in a material play a critical role in the manipulation of the electronic structure, surface acidic and basic properties, dissociative adsorption, charge transportation, reactivity and other chemical properties of the material, and this has been known for a long time through both theoretical calculations and experimental observations [6-9]. However, the earliest study that directly discussed the influence of vacancies on photocatalytic performance was carried out about two decades ago by Yanagida et al. [10, 11]. In their reports, sulfur vacancies on the surface of CdS were shown to promote the photocatalytic reduction of CO2 and the selective production of CO [10, 11]. Studies on oxygen vacancies (VO) in photocatalysis increased dramatically in the 2000s and, accompanied by the development of visible light-driven TiO2 catalysts [12], accelerated further after promising results were obtained from black TiO2 and subsequent research [13-15]. Recently, vacancy-rich photocatalysts containing other vacancies besides VO have been developed. These vacancies include anion vacancies such as sulfur [16], halogen [17-19], and nitrogen vacancies [20-23]; cation vacancies such as bismuth [24, 25], titanium [26, 27], and carbon vacancies [28, 29]; and combinations of both anion and cation vacancies [24, 30].

Vacancy engineering provides a number of notable advantages for high performance photocatalysts: (1) an approach to manipulating the compositions of catalysts without the introduction of impurities; (2) simultaneous tuning of the concentrations and types of vacancies in the bulk or surface lattice to meet requirements closely related to photocatalytic performance (e.g., narrow band gaps, enhanced optical absorption and improved charge separation); (3) a promising low-cost method using simple synthetic techniques to modify traditional photocatalysts composed of earth abundant elements, in contrast to modification using complicated procedures and rare elements; (4) a possible method to simultaneously influence thermocatalysis and photocatalysis by enabling surface chemisorption.

The critical functions of VO on the photocatalytic performance of TiO2 have been frequently reviewed [31-34]. In this minireview, we will introduce and discuss the latest progress regarding a broader range of anion and cation vacancies, and focus on their characterization, formation chemistry and fundamental benefits for photocatalysis.

2 Vacancy characterization

It is essential to characterize the existence, concentration and type of vacancies present in a material. The existence of vacancies can be confirmed by measuring the stoichiometric ratios of elements using elemental analysis, X-ray fluorescence (XRF), X-ray photoelectron spectroscopy (XPS) or Rietveld refinement methods. Vacancies can also be directly observed by scanning tunneling microscopy (STM) [8], or indirectly characterized by cataluminescence [35], photoluminescence [36], electron spin resonance (ESR) [12], or other techniques. ESR is a typical measurement used to confirm the existence of VO, which exhibits a signal at g = 2.004. A signal at g = 1.998 was observed in p-type TiO2 and attributed to titanium vacancies (VTi) [26]. However, these methods cannot distinguish among the different types of vacancies or determine their concentrations.

Positron annihilation spectroscopy is a powerful technique for investigating defects in materials, and can provide information on vacancy types and their relative concentrations [24, 37, 38]. Three positron lifetimes (τ1, τ2 and τ3) and their relative intensities were obtained from the positron lifetime spectra of TiO2 and CeO2 nanoparticles. The positron lifetimes, from shortest to longest, were attributed to small VO in the bulk, larger clusters of VO on the surface, and large voids in the material, respectively. The relative concentration of bulk defects to surface defects can be estimated from the ratio of the intensities of the two corresponding peaks (τ1 and τ2). It was thus shown that a lower relative concentration of bulk vacancies in a TiO2 crystal corresponds to a higher photocatalytic performance because of improved charge separation [37]. In contrast, there is a positive relationship between the presence of large VO clusters on the surface of CeO2 and the reducibility and reactivity of the photocatalyst [38]. Moreover, four positron lifetime components were observed in the spectra of ultrathin BiOCl nanosheets and nanoplates [24]. The shortest of these (~250 ps) was attributed to single isolated bismuth vacancies (VBi), and the second shortest (~325 ps) to Bi3+-oxygen vacancy associates. According to their relative intensities, the associated vacancies were dominant in ultrathin BiOCl nanosheets [24]. However, despite the success of positron annihilation in defect characterization, further knowledge of the various vacancies is required, and more advanced techniques are also desirable for a better understanding of the fundamental relationships between vacancies in the lattices of photocatalysts and their photocatalytic properties.

3 Anion vacancies

The anion vacancies in photocatalytic materials are most often oxygen, nitrogen, sulfur, and halogen vacancies. Owing to the instability of sulfide photocatalysts, there are very few reports on photocatalysts containing sulfur vacancies [16]. In contrast, VO in metal oxides have frequently been investigated because most photocatalysts are n-type metal oxide nanoparticles, in which the conductivity originates from VO. Fig. 1 shows the oxygen and titanium vacancies in a defect-containing TiO2 lattice without dopants.

Fig. 1. Schematic representation of a defect-containing TiO2 lattice without dopants: VO/VTi, oxygen/titanium vacancy; Ti3+, Ti3+ ion in a titanium lattice site (quasi-free electron); O-, O- ion in an oxygen lattice site (quasi-free hole); Tii3+/Tii4+, Ti3+/Ti4+ ion in an interstitial site (modified from Ref. [31]).

Although VO occur naturally in materials, higher density VO can be generated by aliovalent ion doping (e.g., nitrogen doping) [39], formation of two-dimensional ultrathin materials [24], solid-state chemical reduction by NaBH4 [40-42], plasma treatment [12], addition of chelation precursors with carboxylic acids [43], hydrothermal reduction with graphene oxide [44], or annealing in an inert or reducing gas atmosphere (e.g., hydrogen) [13, 45]. Solid-state chemical reduction with NaBH4 is a facile method, and the resulting colored products feature an amorphous shell with VO [40]. However, hydrogen treatment (HT) has also attracted considerable attention after the pioneering work by Mao's group [13]. In fact, HT has been used historically to tailor the optical and electric properties of single crystal oxide materials [46]. This method was applied to TiO2 nanoparticles and found to be effective in improving their photooxidation performance in as early as 2003 [47]. However, it is only since the exciting results with black TiO2 that HT has become an important area of research and been explored extensively for the treatment of TiO2, α-Fe2O3, WO3, BiVO4, and other photocatalysts with various nanoarchitectures [48-51]. After HT, both high density VO and the resulting defect disorders are generated on the surface layer of the nanomaterials. Some results have indicated that the change in the properties of the materials was mainly caused by the high density of surface VO trap sites [36]. However, others have suggested that both VO and the surface structural disorder play a synergistic role, in which VO mainly exists in the bulk of the lattice, but the surface structural disorder is almost stoichiometric [52].

The improved photocatalytic performance after HT has been ascribed to two main effects. First, after HT, the optical absorption of the photocatalysts was greatly extended to the near infrared (NIR) range (~1200 nm). The visible light absorption was attributed to the localized mid-bandgap VO occupied by an unpaired electron in an antibonding orbital at a surface site [36]. These VO states are located at 0.7-1.0 eV below the conduction band (CB) (Fig. 2(A) [12, 46, 52]). Therefore, the electrons can be excited from the valence band (VB) and localized VO states to the CB or from the VB to localized VO states by lower energy photons, and this results in a considerably broadened absorption. Second, a high VO density causes an increase in the donor density in the photocatalysts because the VO function as electron donors. After HT, the donor density in TiO2 nanowires was three orders of magnitudes higher than the density before HT [14]. This increased donor density not only improves the charge transport in the lattice, but also promotes electron transfer at the interface because the upward shift of the Fermi level toward the CB as a result of the increased donor density augments the band bending. However, the considerable improvement in the photoactivity was mainly ascribed to the enhanced performance in the UV region, but not in the visible light region [14, 15]. This was confirmed by time-resolved fluorescence (TRF) and femtosecond transient absorption (TA) spectroscopy, which indicated that the charge carriers slowly decayed on UV excitation, but showed considerable recombination on visible light irradiation [34]. It remains a challenge to effectively utilize the absorption in the vis-NIR range, despite the fact that the integration of photo- and thermocatalysis has great potential for maximizing the use of low energy photons [15, 51, 53-55]. Besides the two benefits mentioned above, HT has also been found to improve the photostability of WO3 by VO production and formation of substoichiometric WO3-x, which was highly resistant to reoxidation and dissolution induced by peroxo species [49].

Fig. 2. (A) Schematic of the nanoparticle structure and band structure models for (a) TiO2 and (b) black TiO2 [52]; (B) Band structure models for defect-deficient WO3 (D-WO3) and defect rich WO3 (R-WO3) [45].

More importantly, vacancies function as active sites and enhance the adsorption of reactants (e.g., oxygen, water, or organic molecules), promote electron migration from materials to adsorbates, and can even directly participate in specific photocatalytic or photochemical reactions. One fundamental feature of VO-rich oxides is their ability to chemisorb oxygen species, which also contributes to the stabilization of VO. Engineering of nondopant VO in CeO2 is an important method for promoting the catalytic oxidation of CO by providing coordinatively unsaturated sites [56]. Interestingly, the inverse reaction, selective photochemical conversion of CO2 to CO, was also found to be mediated by VO, which facilitated electron migration from CeO2 to the chemically adsorbed and preactivated CO2 molecules. Simultaneously, owing to the consumption of VO in the reaction, CO2 photoreduction slowed down and was eventually terminated [57].

Based on their behavior in both photo- and thermocatalysis, vacancies could bridge them and enable a synergistic effect for the utilization of solar energy, even in the vis-NIR range. VO were observed as electron-transfer mediators in the thermocatalytic decomposition of CO2 on mesoporous WO3, in which VO were consumed to produce C/CO [51]. A synergistic photo/thermocatalytic process with a high selectivity for the conversion of CO2 into CH4 was accordingly developed using this VO-rich WO3 [51], which represents an important strategy for the combination of photo- and thermocatalysis to realize CO2 reduction. However, it would be more desirable to achieve combined photo/thermocatalysis using only solar energy, thus avoiding external energy inputs. Recently, highly selective aerobic coupling of amines to the corresponding imines was achieved under NIR illumination (> 700 nm) on VO-rich WO3 nanosheets (Fig. 2(B) [45]. The low energy photons were used to generate superoxide radicals (O2•-) in a chemisorbed state at VO sites. This was achieved by electron transfer from VO to the chemisorbed oxygen as a result of the strong electronic coupling between them. Band excitation at the reduction level for free O2/O2•- (-0.33 V vs. NHE) is not required in this process. Surprising stability was obtained owing to the recovery of surface VO in the reaction between O2•- and neighboring activated benzylamine. The utilization of low energy photons is thus a promising strategy for the selective conversion of substrates using VO.

The presence of nitrogen vacancies (VN) is an intrinsic property of nonstoichiometric nitride photocatalysts, such as Ta3N5 [58, 59] and metal-free g-C3N4 [20, 22]. VN-containing g-C3N4 was first produced by controlling the polycondensation temperature of dicyandiamide in an open container, and promoted the photodecomposition of RhB [22]. In this material, the number of short- and long-lived charge carriers was decreased and increased, respectively. This suppressed charge-carrier recombination was attributed to the trapping of charge carriers in the localized electronic states of VN, and the accordingly reduced spatial overlap. Thermal treatment in a hydrogen or nitrogen atmosphere, sulfur doping, and microwave synthesis have also been reported to produce g-C3N4 with VN [20, 21, 23, 60-62]. Compared with traditional modification of only the surface layer of photocatalysts, homogeneous modification features a complete change in the electronic structure of the photocatalyst, and can be realized by using layered nanostructured precursors [63]. Hydrogenation of the layered structural melon was used for the homogeneous self-modification of g-C3N4 with VN, and this material had a greatly reduced band gap (2.03 eV) [20]. However, a reduced redox ability was expected owing to the band shifts in this modified g-C3N4. In addition to its enhanced performance in photocatalytic oxidation and water splitting, VN-containing g-C3N4 also shows great potential in nitrogen fixation [23, 61, 62]. As well as promoting interfacial charge transfer from the catalyst to the adsorbed N2, the VN in g-C3N4 can also serve as selective chemical adsorption sites for the adsorption, activation and reduction of N2 because of their similar properties to those of N2-imprinted polymers [23]. The use of VN-containing nitride photocatalysts with a negative conduction band may also be a promising strategy for the reduction of nitrogen-containing compounds.

Halogen vacancies (VH) are easily generated in bismuth oxyhalides, which have unique layered structures consisting of positively charged[Bi2O2]2+ slabs and interleaved negative halogen slabs with nonbonding interactions along the c-axis [17, 19]. Because of the weak van der Waals interactions, halogen ions can diffuse out of the layered structure by calcination, or be replaced by other halogen ions through ion exchange in the solution or solid state. Generally, bismuth oxyhalides possess diverse halogen-deficient crystal phases, which can be obtained simply by tuning the precursor ratios or/and calcining at relatively high temperatures. However, we recently observed that Bi7O9I3 containing iodine vacancies could be obtained by calcination below the phase transition temperature [17, 18]. The iodine deficiency was indicated by the decrease in the Bi/I atomic ratio from 2.36 to 2.80 after calcination at 350 ℃. It was found that shallow VH improve the carrier transport properties, whereas deep VH have the opposite effect [64]. Homogeneous modification of the bismuth oxyiodides with iodine vacancies is expected because of their layered structure, and the whole band gap increased from 2.04 to 2.31 eV after calcination at 350 ℃. Moreover, the enlargement of the band gap was confirmed by theoretical calculations, which also indicated the downward shift of the band position and the transition of the semiconductor behavior from p to n type. These changes are expected to increase the oxidation ability of the photogenerated holes, improve the electron mobility, and accordingly contribute to an enhanced photooxidation performance. However, although VH can easily be created in layered structural bismuth oxyhalides, there are concerns about the stability of these compounds, especially in the aqueous phase, which greatly restricts their application in water purification.

4 Cation vacancies

There are very few reports on cation vacancies in the field of photocatalysis. In contrast to anion vacancies and cation interstitials, which are shallow donors, cation vacancies are shallow acceptors and always induce p-type conductivity. The benefits of VTi in TiO2 are expected to include: (1) increase in the electrical conductivity of the ionic components; (2) increase in the mobility of electrons and interfacial transfer of charge carriers, which suppresses recombination and enhances the photocatalytic activity; (3) generation of room-temperature ferromagnetism; and (4) provision of surface active sites for water adsorption and formation of active complexes, and the corresponding enhanced photoactivity in water splitting [65-67]. Some experimental results have indicated that the band gap of TiO2 is independent of the VTi concentration [26, 65]. Theoretical calculations have also suggested that VTi would not generate new states in the band gap. However, the presence of VTi in TiO2 nanosheets caused a slight downward shift in the VB maximum and a considerable downward shift in the CB minimum; thus resulting in a net narrowed band gap [67].

It is difficult to generate stable cation vacancies in traditional n-type oxides, for example, VTi in TiO2. Nowotny et al. [68] found that the transport kinetics of VTi in TiO2 were much slower than those of VO and titanium interstitials, and accordingly resulted in quasi-quenches of the VTi species. Therefore, VTi are expected to be restricted to the surface or near-surface regions, which could be one of the reasons for the difficulty in synthesizing VTi-containing TiO2. However, p-type TiO2 containing VTi can be engineered in the following ways: (1) generation of defect disorder by calcination above 1573 K [69]; (2) prolonged oxidation (p(O2) = 75 kPa) at temperatures above 1273 K [27, 65, 70]; (3) incorporation of aliovalent dopant ions [71, 72]; and (4) controlled calcination of lamellated titanium glycerolate [26]. According to Rietveld refinement results, high concentrations of titanium defects were present in iron-doped TiO2 [71] or TiO2 with a particle size of several nanometers [73]. Moreover, the concentration of VTi increased with increasing iron content and decreased with increasing particle size, but remained stable when the vacancies were balanced by hydroxyl ions or protons in the lattice. Recently, Zou's group [26, 74] developed stable p-type ZnO and TiO2 with cation vacancies by calcination of the glycerolate precursors. These p-type oxides are formed through the generation of oxygen-rich structures during the decomposition of interlayer organic groups at high temperatures, which creates distortion and thus generates cation vacancies in the lattice. This method represents a promising way of producing photocatalysts with cation vacancies. However, although the generation of VTi has been greatly improved and the benefits have been theoretically discussed, the characterizatio n of these vacancies, and their stability and effects in photocatalytic interfacial processes are far from clear.

In contrast to VN-containing g-C3N4, g-C3N4 containing cation carbon vacancies (VC) can be developed by thermally treating bulk g-C3N4 in an NH3 or Ar atmosphere [28, 29]. In addition, VC-induced room-temperature ferromagnetism of g-C3N4 has been confirmed [29]. The dramatically improved photocatalytic hydrogen evolution was attributed to the higher donor density and the notably longer lifetime of the charge carriers. Moreover, VC-containing g-C3N4 displayed considerably higher H2O2 production than both pure g-C3N4 and VN-containing g-C3N4 [28]. This was not only attributed to the enhanced optical absorption and higher donor density of VC-containing g-C3N4, but also to its improved O2 adsorption, the promotion of electron transfer for O2 reduction, and most importantly, the transformation of O2 reduction into a two-electron process, in which the amino groups around the VC had an indispensable role. This suggests that cation vacancies in g-C3N4 have great potential for certain photocatalytic applications.

Bismuth oxide-based photocatalysts have attracted considerable attention, owing to their narrow band gap and high activity in the visible light range, as well as the relative abundance of elemental bismuth [18, 75]. Bismuth vacancies (VBi) are also ubiquitous in nonstoichiometric bismuth-oxide compounds [24, 25, 76, 77]. Various bulk defects, including VO and VBi, were observed in ball-milled BiPO4 [76]. These defects degraded the photocatalytic performance of BiPO4, but were easily removed by reflux or calcination. Recently, a stable VBi-containing Bi6S2O15 was developed by increasing the ratio of the sulfate to bismuth sources in the hydrothermal synthesis [25]. The resulting catalyst was characterized as core-shell nanowires with a disordered shell layer containing a high concentration of VBi. These vacancies contributed to the efficient separation of charge carriers, and reduced the size of the band gap by elevating the whole band and producing shallow surface states above the VB.

The components and concentration of vacancies in the surface lattice are facet-dependent; therefore, two-dimensional materials with different facets and thicknesses have different vacancy compositions. In general, VBi dominate on the surface of BiOCl nanoplates. However, when the thickness of the nanoplates was reduced to 2.7 nm, Bi3+-oxygen vacancy associates were observed to dominate on the surface of these ultrathin BiOCl nanosheets. This resulted in a strongly negatively charged surface and a smaller band gap, and the separation of photogenerated charges was promoted [24]. Specific facets of ultrathin photocatalytic materials are exposed on light irradiation or chemical reaction; this could provide a delicate strategy for tuning the available vacancies for photocatalytic applications.

5 Conclusion and prospect

The latest progress in this field provides a greater fundamental understanding of the relationship between a diverse range of vacancies and their related photocatalytic properties, and the growing knowledge has been successfully applied to realize advanced photocatalytic processes for water splitting, N2 fixation, H2O2 production, decontamination, organic synthesis, and CO2 reduction, among others. Vacancy-rich photocatalysts display extended optical absorption, facilitate charge separation and enhance the selective chemisorption of reactants, which all result in improved photoreactivity. However, further efforts are required to deal with the following open problems or challenges. (1) More powerful characterization techniques are needed to reveal the existence, format and concentration of the vacancies. This is essential for the understanding the association between vacancies and photocatalytic performance. Currently, we cannot easily discern the different types of vacancies, let alone the format of the vacancies in the lattice surface, subsurface or bulk. (2) Current knowledge on the formation chemistry and fundamental functions of anion or cation vacancies in photocatalytic processes is insufficient and far from clear, especially for those photocatalysts containing both donor and acceptor vacancies [24, 30]. (3) It is desirable that vacancies in photocatalysts retain their function and remain unchanged for long periods of time. However, although we can obtain stable vacancy-rich compounds, and we understand the dependence of stability on the vacancy format according to theoretical calculations [78], we do not yet know the exact factors that control the stability of vacancies, or how to manipulate the raw materials and synthetic methods to tune the format of the vacancies. It is expected that increasing attention on vacancies in photocatalysts and the development of vacancy-engineering techniques will mean that their use in solar photocatalytic applications will be greatly accelerated in the near future.

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